A Reliable Double-Sided 1200-V/600-A Multichip Half-bridge Insulated Gate Bipolar Transistor (IGBT) Module with High Power Density

A double-sided 1200-V/600-A multichip half-bridge insulated gate bipolar transistor (IGBT) module is successfully fabricated utilizing nanosilver paste as die attachment. The module consists of eight IGBT chips and eight diodes with extremely high power density. The dimension of this module is only 70 mm x 59 mm x 3.48 mm with a maximum power density as high as 5.01 x 10(4) kW/L, which is more than 9 times higher than the power density of a commercial wire-bonding one. Thermal properties and electrical properties of the double-sided module are also characterized. In order to use the module with such high power density, double-sided cooling is suggested. No degradation of the power devices proved that the way to double-sided packaging power devices could be used for future manufacturing of high power density power module.