Copper-related defects in silicon: Electron-paramagnetic-resonance identification

被引:15
|
作者
Hai, PN [1 ]
Gregorkiewicz, T [1 ]
Ammerlaan, CAJ [1 ]
Don, DT [1 ]
机构
[1] NATL UNIV HANOI,FAC PHYS,HANOI,VIETNAM
来源
PHYSICAL REVIEW B | 1997年 / 56卷 / 08期
关键词
D O I
10.1103/PhysRevB.56.4620
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper the observation of two electron-paramagnetic-resonance spectra, both present in p-type silicon samples after doping with silver, is reported. The two centers show a symmetry lower than cubic and have an effective electron spin S=1/2. In view of the detected hyperfine interaction with nuclear spins I=3/2, the spectra are shown to be related to a contaminant introduced into the samples during the diffusion process. By analysis of the features of the spectrum and the defect formation, a spectrum of the tetragonal symmetry, labeled Si-NL58, is identified as a copper-copper pair in a negatively charged state. The second spectrum,labeled Si-NL59, is attributed to a complex containing one copper atom.
引用
收藏
页码:4620 / 4625
页数:6
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