Investigations on electronic structure, magnetic and optical properties of C and Ti co-doped zincblende GaN for optoelectronic applications

被引:13
|
作者
Khan, M. Junaid Iqbal [1 ]
Kanwal, Zarfishan [1 ]
Latif, Abid [2 ]
Ahmad, Javed [1 ]
Akhtar, Perveen [1 ]
Yousaf, Masood [3 ]
Ullah, Hamid [4 ]
机构
[1] Bahauddin Zakariya Univ, Dept Phys, Lab Theoret & Expt Phys, Multan 60800, Pakistan
[2] Bahauddin Zakariya Univ, Fac Engn & Technol, Dept Civil Engn, Multan 60800, Pakistan
[3] Univ Educ, Dept Phys, Div Sci & Technol, Lahore 54770, Pakistan
[4] Univ Ulsan, Dept Phys, Multiscale Mat Modeling Lab, Ulsan 44610, South Korea
来源
OPTIK | 2021年 / 231卷
关键词
Gallium nitride (GaN); C and Ti doping; Co-doping; Density of states; DFT calculations; Optical properties; ELECTRICAL-PROPERTIES; CARBON; 1ST-PRINCIPLES; APPROXIMATION; TRANSISTORS; DIODES; ENERGY; FILMS; ALN; BN;
D O I
10.1016/j.ijleo.2021.166425
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In the current research, we perform a density functional theory study of C, Ti monodoped (C@GaN, Ti@GaN), and their co-doped GaN (C-Ti@GaN). We investigate the effect of C, Ti and their co-doping on the structural, electronic, magnetic, and optical properties using the Wien2K code. The formation energy of monoand co-doped GaN is negative under the N-rich conditions and co-doped material is more stable than the mono-doped material. Optical absorption of monodoped GaN is redshifted while the absorption of co-doped material is blue shifted. Our calculated results are in accordance with the already reported literature. Since, we did not find magnetism in the C-Ti@GaN material and because of blueshift in absorption spectrum; we suggest that codoped GaN is more favorable for the UV optoelectronics, power electronics, and the UV solar cells applications than the co-doped materials.
引用
收藏
页数:12
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