Theoretical Study on Structural Stability, Growth Behavior and Photoelectron Spectroscopy of Copper-Doped Germanium Clusters CuGen-/0 (n=4-13)

被引:2
|
作者
Wang, Xin [1 ,2 ]
Dong, Caixia [2 ,3 ]
Yang, Jucai [1 ,2 ]
机构
[1] Inner Mongolia Univ Technol, Sch Energy & Power Engn, Hohhot 010051, Peoples R China
[2] Inner Mongolia Key Lab Theoret & Computat Chem Si, Hohhot 010051, Peoples R China
[3] Inner Mongolia Univ Technol, Sch Min & Technol, Hohhot 010051, Peoples R China
基金
中国国家自然科学基金;
关键词
The ground state structure of CuGen-/0; Spectra properties; Relative stability; HOMO-LUMO gap; Nucleus-independent chemical shift; EFFECTIVE CORE POTENTIALS; DENSITY-FUNCTIONAL THEORY; MAGNETIC-PROPERTIES; GE-N; ATOMIZATION ENTHALPIES; ELECTRONIC-PROPERTIES; TRANSITION; GEOMETRIES; MOLECULES; PB;
D O I
10.1007/s10876-021-01985-x
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Studies on Cu-doped germanium clusters in the neutral and mono-anion states CuGen-/0 (n = 4-13) are carried out employing a double-hybrid density functional mPW2PLYP scheme. The global minimal structure, spectral property, HOMO-LUMO gap, and stability of CuGen-/0 (n = 4-13) were confirmed. The results showed that the global minimal structures of the anionic clusters are Cu-substituted for a Ge in the ground state of anionic Ge-n+1(-) with n <= 8, and Cu atom is encapsulated into germanium cages starting from n = 9. For neutral, it is also Cu-encapsulated into cage-like Ge framework with n >= 9. The spectra information including adiabatic electron affinity, vertical detachment energy and simulated photoelectron spectroscopy were presented. The HOMO-LUMO gap, atomization energy, and second energy difference for CuGen-/0 (n = 4-13) clusters along with NICS of CuGe12- were evaluated to examine the thermodynamic and chemical stability. The results revealed that anionic cluster CuGe12- with a high-symmetry endohedral I-h configuration possessed a perfect thermodynamic stability and chemical reactivity, making it possible as appropriate building block for new multi-functional semiconductor materials.
引用
收藏
页码:403 / 412
页数:10
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