Nonreciprocal TE-TM mode converter with semiconductor guiding layer

被引：9
|
作者：
Yokoi, H [1 ]
Mizumoto, T [1 ]
Iwasaki, H [1 ]
机构：
[1] Tokyo Inst Technol, Grad Sch Sci & Engn, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528552, Japan
来源：
ELECTRONICS LETTERS | 2002年 / 38卷 / 25期
关键词：
D O I：
10.1049/el:20021035
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A nonreciprocal TE-TM mode converter with a semiconductor guiding layer was studied. The mode converter comprised a magnetic garnet/GaInAsP/InP (AlInAs oxide, air) waveguide. When the lower cladding layer was air, the propagation distance required for a 45degrees mode conversion was estimated to be several hundreds of microns at 1.55 mum.
引用
收藏
页码：1670 / 1672
页数：3
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