Thermal Model Development for SiC MOSFETs Robustness Analysis under Repetitive Short Circuit Tests

被引：2
|
作者：
Pulvirenti, M. [1 ]
Cavallaro, D. [1 ]
Bentivegna, N. [1 ]
Cascino, S. [1 ]
Zanetti, E. [1 ]
Saggio, M. [1 ]
机构：
[1] STMicroelectronics, Str Primosole 50, Catania, Italy
来源：
2020 22ND EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'20 ECCE EUROPE) | 2020年
关键词：
Silicon Carbide (SiC); Semiconductor device; Short Circuit Test (SCT); Finite Element Method (FEM); POWER MOSFETS;
D O I：
10.23919/epe20ecceeurope43536.2020.9215664
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The aim of this paper is to analyze the SiC MOSFETs behavior under repetitive short circuit tests. In particular, the activity is focused on a deep evaluation of short circuit dynamic by dedicated laboratory measurements conducted at different conditions supported and compared by means of a robust physical model developed by Finite Element Approach (FEA) and Failure Analysis (FA).
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页数：10
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