Optimization of N-polar GaN growth on bulk GaN substrate by MOCVD

被引：2

作者：

Wang, Xuewei ^{[1
]}

Xu, Shengrui ^{[1
]}

Du, Jinjuan ^{[1
]}

Peng, Ruoshi ^{[1
]}

Fan, Xiaomeng ^{[1
]}

Zhao, Ying ^{[1
]}

Li, Wen ^{[1
]}

Zhang, Jincheng ^{[1
]}

Hao, Yue ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Wide Bandgap Semicond Technol Disciplines State K, Xian 710071, Shaanxi, Peoples R China

来源：

MATERIALS LETTERS | 2019年 / 253卷

基金：

中国国家自然科学基金;

关键词：

Epitaxial growth; N-polar GaN; Defects; Bulk GaN substrate; V/III ratio; Background carrier concentration; SAPPHIRE;

D O I：

10.1016/j.matlet.2019.06.106

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

N-polar GaN samples under different V/Ill ratio were grown on bulk N-polar GaN substrates by metal organic chemical vapor deposition. The V/Ill ratio was optimized by adjusting the flow rate of trimethylgallium, meanwhile the flow rate of ammonia is consistent. The samples were characterized by High Resolution X-Ray Diffraction, Raman, photoluminescence and Van-der-Pauw Hall measurement. The best dislocation density of the samples is approximately 3.72 x 10(6) cm(-2) which is three orders of magnitude smaller than the common heteroepitaxy of N-polar GaN. The background carrier concentration of the samples is reduced by about 95% as the flow rate of trimethylgallium decreasing. (C) 2019 Elsevier B.V. All rights reserved.

引用

页码：314 / 316

页数：3

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