Validation of the small-signal model of a forward-biased p-n junction diode

被引：1
|
作者：
Kumar, PR [1 ]
Sharma, P [1 ]
Patil, MB [1 ]
机构：
[1] Indian Inst Technol, Dept Elect Engn, Kanpur 208016, Uttar Pradesh, India
来源：
SOLID-STATE ELECTRONICS | 2000年 / 44卷 / 07期
关键词：
p-n junction diode; small-signal model; device simulation; Shockley model;
D O I：
10.1016/S0038-1101(00)00020-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Small-signal parameters of an abrupt p-n junction diode under forward bias are computed numerically by solving Poisson's equation and continuity equations together. The parameter values are compared with those obtained with analytical expressions. It is found that the depletion capacitance is underestimated when the depletion approximation is used. The diffusion conductance and capacitance values agree with theory only in a limited range of forward bias voltages, and this range becomes smaller as the minority carrier lifetime decreases. The reasons behind the discrepancy are discussed. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1247 / 1253
页数：7
相关论文
共 50 条
  • [1] A model of the 1/f noise in a forward-biased p-n diode
    Dmitriev, A. P.
    Levinshtein, M. E.
    Kolesnikova, E. N.
    Palmour, J. W.
    Das, M. K.
    Hull, B. A.
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (01)
  • [2] Modeling of Electrostatics and Currents in a Forward-Biased p-n Junction
    Lin, Kuan-Wun
    Taur, Yuan
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (08) : 4489 - 4497
  • [3] SUPPRESSION OF NOISE BY SPACE CHARGE IN A FORWARD-BIASED P-N JUNCTION
    TARATUTA, AS
    CHAIKA, GE
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (05): : 658 - &
  • [4] INTERBAND RECOMBINATION MODEL FOR LIGHT EMISSION FROM A FORWARD-BIASED SILICON P-N JUNCTION
    SAHASRABUDDHE, CG
    KHOKLE, WS
    [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1968, 24 (02) : 177 - +
  • [5] SPACE-CHARGE RECOMBINATION IN A FORWARD-BIASED DIFFUSED P-N JUNCTION
    CHOO, SC
    [J]. SOLID-STATE ELECTRONICS, 1971, 14 (12) : 1201 - &
  • [6] SUPPRESSION OF NOISE IN FORWARD-BIASED P-N JUNCTIONS
    TARATUTA, AS
    CHAIKA, GE
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (06): : 677 - &
  • [7] CALCULATION OF NOISE LEVEL IN FORWARD-BIASED P-N JUNCTIONS
    TARATUTA, AS
    [J]. RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1967, 12 (05): : 882 - &
  • [8] NUMERICAL ANALYSIS OF A FORWARD-BIASED STEP-JUNCTION P-L-N DIODE
    CHOO, SC
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (08) : 574 - &
  • [9] Generation-recombination noise in forward-biased 4H-SiC p-n diode
    Rumyantsev, Sergey L.
    Dmitriev, Alexander
    Levinshtein, Michael
    Veksler, Dmitri
    Shur, Michael S.
    Palmour, John
    Das, Mrinal
    Hull, Brett
    [J]. NOISE AND FLUCTUATIONS IN CIRCUITS, DEVICES, AND MATERIALS, 2007, 6600
  • [10] EDGE LUMINESCENCE SPECTRUM OF FORWARD-BIASED GAP P-N JUNCTIONS
    BUGARINOVICH, D
    EVSTROPO.VV
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (03): : 358 - +
12345