Plasma CVD of high quality titanium nitride using titanium(IV)isopropoxide as precursor

High-quality TiN films were deposited in an electron-cyclotron-resonance (ECR) plasma process at low substrate temperatures between 100 and 450 degrees C using titanium(IV)isopropoxide (TIP) {Ti[OCH(CH3)2](4)} as a precursor. TIP was introduced into the downstream region of an ECR nitrogen or ammonia plasma. The electrical properties of the gold coloured TIN layers (100-400 mu Omega cm) depend mainly on the deposition rate. Despite the use of an oxygen-containing titanium precursor the oxygen content in the TiN was found to be less than or equal to 2 at%. The measured resistivities and the purity of the TiN films indicate a selective separation of the isopropoxide ligand in the ECR downstream plasma. The films were characterized by resistivity measurements, secondary ion mass spectrometry (SIMS) and x-ray diffraction (XRD). Chemical ionization mass spectrometry (CIMS) investigations of the gas mixture in the reactor using nitrogen as plasma gas revealed the formation of acetone as a byproduct of the deposition process.