Orientation control of (Bi,La)4Ti3O12 thin films by addition of silicates and germanates

被引：0
|
作者：
Kawashima, Y
Kijima, T
Ishiwara, H
机构：
[1] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[2] R&D Assoc Future Electron Devices, Taito Ku, Tokyo 1100014, Japan
来源：
INTEGRATED FERROELECTRICS | 2002年 / 45卷
关键词：
D O I：
10.1080/10584580215341
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Orientation of crystallites in (Bi,La)(4)Ti3O12 (BLT) thin films were successfully controlled by adding such silicates and germanates as Bi2SiO5 , ZrSiO4 and La2GeO5 . The ferroelectric films were formed by spin-coating mixed sol-gel solutions of BLT and silicate or germanate on a Pt/Ti/SiO2/Si structure. It was found from XRD analysis that the preferred orientation of crystallites in the BLT films was changed by the additives. That is, the orientation of crystallites in a Bi2SiO5-added BLT film was random, while it was almost perfectly c-axis-oriented in La2GeO5-added BLT and it was strongly (117)-oriented when ZrSiO4 was added to BLT. It was also found that the remnant polarization and coercive field changed reflecting these different orientations.
引用
收藏
页码：197 / 201
页数：5
相关论文
共 50 条
  • [1] Ferroelectric characteristics control of (Bi,La)4Ti3O12 and SrBi2Ta2O9 films by addition of silicates and germanates
    Kawashima, Y., 1600, Japan Society of Applied Physics (42):
  • [2] Ferroelectric characteristics control of (Bi,La)4Ti3O12 and SrBi2Ta2O9 films by addition of silicates and germanates
    Kawashima, Y
    Kijima, T
    Ishiwara, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (4B): : 2037 - 2040
  • [3] Orientation control of (Bi,La)4Ti3O12 thin films derived by sol-gel method
    Park, BE
    Kim, CJ
    Ishiwara, H
    FERROELECTRICS, 2005, 318 (318) : 67 - 73
  • [4] Effect of substrate size on crystalline orientation and electrical properties of (Bi, La)4Ti3O12 thin films
    Chiu, TW
    Wakiya, N
    Shinozaki, K
    Mizutani, N
    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 2004, 112 (1305) : 266 - 270
  • [5] Preparation and electrical properties of (Bi,La)4Ti3O12/Pb(Zr,Ti)O3/(Bi,La)4Ti3O12 multilayer thin films by a chemical solution deposition
    Bao, DH
    Wakiya, N
    Shinozaki, K
    Mizutani, N
    FERROELECTRICS, 2002, 270 : 1213 - 1218
  • [6] Ferroelectric properties of sandwich structured (Bi,La)4Ti3O12/Pb(Zr,Ti)O3/(Bi,La)4Ti3O12 thin films on Pt/Ti/SiO2/Si substrates
    Bao, D
    Wakiya, N
    Shinozaki, K
    Mizutani, N
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2002, 35 (03) : L1 - L5
  • [7] Deposition control of La in the preparation of (Bi,La)4Ti3O12 films by liquid-delivery MOCVD
    Sekita, Yoshihiro
    Tasaki, Yuzo
    Tanaka, Tsutornu
    Yoshizawa, Shuji
    Transactions of the Materials Research Society of Japan, Vol 31, No 1, 2006, 31 (01): : 177 - 179
  • [8] Growth and electrical properties of (Bi, Nd)4Ti3O12 thin films
    Yang, CH
    Wang, Z
    Pan, DY
    Han, JR
    Li, QC
    Wang, JH
    SURFACE REVIEW AND LETTERS, 2004, 11 (06) : 503 - 507
  • [9] Aqueous chemical solution deposition of ferroelectric Ti4+ cosubstituted (Bi,La)4Ti3O12 thin films
    Hardy, An
    D'Haen, Jan
    Goux, Ludovic
    Wouters, Dirk
    Van Bael, Marlies
    Van den Rul, Heidi
    Mullens, Jules
    CHEMISTRY OF MATERIALS, 2007, 19 (12) : 2994 - 3001
  • [10] Bilayered Pb(Zr,Ti)O3/(Bi,Nd)4Ti3O12 thin films
    C. H. Sim
    J. M. Xue
    X. S. Gao
    Z. H. Zhou
    J. Wang
    Journal of Electroceramics, 2008, 21 : 331 - 335
12345