Local order of Te impurity atoms and free electron concentration in heavily doped GaAs:Te

被引：4

作者：

Slupinski, T ^{[1
]}

Zielinska-Rohozinska, E ^{[1
]}

机构：

[1] Warsaw Univ, Inst Expt Phys, Warsaw, Poland

来源：

THIN SOLID FILMS | 2000年 / 367卷 / 1-2期

关键词：

heavily doped semiconductors; GaAs : Te solid solution; X-ray diffuse scattering; local order of impurities;

D O I：

10.1016/S0040-6090(00)00695-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Zn this paper we briefly show the results of joined studies of the free electron concentration and X-ray diffuse scattering (detected by HR XRD - reciprocal space maps) as a function of Te atoms concentration in GaAs and controlled annealing of samples at high temperatures 700-1200 degrees C. The free electron concentration can be reversible changed between low and high values merely by a proper annealing of GaAs samples with Te concentration higher than similar to 4 x 10(18) cm(-3). Strong X-ray diffuse scattering is observed in annealed samples, if electron concentration is lowered. Detailed features of X-ray scattering in the reciprocal space can be very well understood within Krivoglaz microscopic model of scattering due to local correlations of impurity positions in a solid solution (local order) and related crystal lattice distortions. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：227 / 231

页数：5

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