LATERALLY COUPLED TRIPLE SELF-ASSEMBLED QUANTUM DOTS

被引：0

作者：

Amaha, S. ^{[1
]}

Hatano, T. ^{[1
]}

Kubo, T. ^{[1
]}

Teraoka, S. ^{[1
]}

Shibatomi, A. ^{[1
]}

Tokura, Y. ^{[2
,3
]}

Tarucha, S. ^{[4
,5
]}

机构：

[1] JST, ICORP, Quantum Spin Informat Project, Atsugi, Kanagawa 2431098, Japan

[2] JST, ICORP, Quantum Spin Informat Pjoject, Atsugi, Kanagawa 2430198, Japan

[3] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[4] JST, ICORP, Quantum Spin Informat Pjoject, Bunkyo Ku, Hongo 1138656, Japan

[5] Univ Tokyo, Univ Tokyo & Appl Phys, Sch Engn, Inst Nano Quantum Informat Elect,Bunkyo Ku, Hongo 1138656, Japan

来源：

PROCEEDINGS OF THE 9TH INTERNATIONAL SYMPOSIUM ON FOUNDATIONS OF QUANTUM MECHANICS IN THE LIGHT OF NEW TECHNOLOGY | 2009年

关键词：

Quantum dots; triple quantum dots; self-assembled quantum dots;

D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

We investigate the electronic properties of a sub-micron vertical resonant tunneling structure containing three self-assembled InAs quantum dots (SADs) surrounded by four gate electrodes. The stability diagram is obtained by measuring Coulomb oscillation peaks as a function of the four gate voltages, which are used to modulate the electro-chemical potential of each SAD differently. We assign the charge states in the diagram by identifying three sets of Coulomb oscillation lines. We observe specific anti-crossing behaviors for the two Coulomb oscillation lines in the different sets, reflecting parallel couplings between three SADs in the conduction channel.

引用

页码：194 / +

页数：2

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