A very narrow mesa biased IGBT for ultra-low on-state saturation voltage and a good short circuit ruggedness

被引：0
|
作者：
Lu, Jiang [1 ]
Tian, Xiaoli [1 ]
Liu, Jiawei [1 ]
Chen, Hong [1 ]
Liang, Fei [2 ]
Bai, Yun [1 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Beijing, Peoples R China
[2] Sichuan Huacan Elect Co Ltd, Chengdu, Sichuan, Peoples R China
来源：
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2019年
关键词：
Insulated gate bipolar transistor (IGBT); very narrow mesa; saturation voltage; short circuit;
D O I：
10.1109/edssc.2019.8753941
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this paper, a novel CSTBT with very narrow mesa structure is proposed by numerical simulation. The floating pwell region in the proposed structure is connected with the cathode through the very narrow mesa structure to deplete the very high dose concentration of the CS layer. Therefore, the conductivity modulation effect of the proposed structure can be enhanced significantly. It can help the proposed structure to achieve ultra-low on-state saturation voltage closed to the theoretical limit. In addition, there is no degeneration of the short-circuit behavior due to the relatively normal active cell mesa region. It can avoid the CIBL behavior induced by the very narrow conductive channel structure.
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页数：3
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