Effect of Molybdenum Deposition Temperature on the Performance of CuIn1-xGaxSe2 Solar Cells

被引:0
|
作者
Pradhan, Puja [1 ,2 ]
Aryal, Puruswottam [1 ,2 ]
Ibdah, Abdel-Rahman [1 ,2 ]
Koirala, Prakash [1 ,2 ]
Li, Jian [1 ,2 ]
Podraza, Nikolas J. [1 ,2 ]
Rockett, Angus A. [3 ]
Marsillac, Sylvain [4 ]
Collins, Robert W. [1 ,2 ]
机构
[1] Univ Toledo, Ctr Photovolta Innovat & Commercializat, 2801 W Bancroft St, Toledo, OH 43606 USA
[2] Univ Toledo, Dept Phys & Astron, Toledo, OH 43606 USA
[3] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
[4] Old Dominion Univ, Virginia Inst Photovolta, Norfolk, VA 23695 USA
关键词
solar cells; CIGS; molybdenum; spectroscopic ellipsometry;
D O I
暂无
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
We have studied the effect of substrate temperature in molybdenum (Mo) back contact deposition on its structural evolution, optical properties, and most importantly, the over-deposited CuIn1-xGaxSe2 solar cell performance. A series of Mo thin films was DC sputtered onto thermally oxidized Si at substrate temperatures from 25 degrees C to 385 degrees C. Real time spectroscopic ellipsometry (RTSE) was performed to determine the evolution of the bulk and surface roughness layer thicknesses as well as the complex dielectric functions of the Mo films. CuIn1-xGaxSe2 solar cells were fabricated for comparison on Mo back contact films deposited on soda lime glass at 25 degrees C and 250 degrees C.
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页数:4
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