Temporal Noise Analysis and Reduction Method in CMOS Image Sensor Readout Circuit

被引：17
|
作者：
Kim, Bong Chan [1 ,2 ]
Jeon, Jongwook [1 ,2 ]
Shin, Hyungcheol [1 ,2 ]
机构：
[1] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea
[2] Seoul Natl Univ, Dept Elect Engn, Seoul 151742, South Korea
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2009年 / 56卷 / 11期
关键词：
CMOS image sensors (CISs) readout circuit; correlated double sampling (CDS) operation; low-frequency noise (LF noise); noise reduction; noise transfer function; thermal noise; LOW-FREQUENCY NOISE;
D O I：
10.1109/TED.2009.2030619
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Temporal noise such as thermal and low-frequency noise (LF noise) in the CMOS imager readout circuit has been analyzed. In addition, the effect of correlated double sampling operation on the noise was included. We have derived an analytical noise equation for the specified readout circuit, and confirmed its validity by comparing it with the simulation result. Thermal noise model which is accurate in short-channel devices operating in saturation region was used. Since the in-pixel devices (source follower and selection transistor) of the readout circuit are relatively small in size, and thus exhibits random telegraph signal (RTS) noise, both 1/f and RTS noise were considered for their LF noise. Based on the analyzed noise components, we presented the noise reduction method by adjusting the transistors sizes in the readout circuit.
引用
收藏
页码：2489 / 2495
页数：7
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