Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells

被引：59
|
作者：
Zeng, KC
Lin, JY
Jiang, HX
Salvador, A
Popovici, G
Tang, H
Kim, W
Morkoc, H
机构：
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[2] UNIV ILLINOIS,COORDINATED LAB,URBANA,IL 61801
来源：
APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 10期
关键词：
D O I：
10.1063/1.119896
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Effects of well thickness and Si doping on the optical properties of GaN/AlGaN (MQWs) have been investigated by picosecond time-resolved photoluminescence (PL measurements. Our results have yielded that (i) the optical transitions in nominally undoped MQWs with narrow well thicknesses (L-w<40 Angstrom) were blue shifted with respect to the GaN epilayer due to quantum confinement, however, no such blue shift was evident for the MQWs with well thicknesses larger than 40 Angstrom, (ii) the band-to-impurity transitions were the dominant emission lines in nominally undoped MQWs of large well thicknesses (L-w>40 Angstrom) at low temperatures, and (iii) Si doping improved significantly the crystalline quality of MQWs of large well thicknesses (L-w>40 Angstrom). The implications of these results on the device applications based on III-nitride MQWs have been discussed. (C) 1997 American Institute of Physics.
引用
收藏
页码：1368 / 1370
页数：3
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