Fabrication of quantum dot transistors incorporating a single self-assembled quantum dot

被引：5
|
作者：
Jung, SK
Hwang, SW [1 ]
Ahn, D
Park, JH
Kim, Y
Kim, EK
机构：
[1] Korea Univ, Sch Elect Engn, Sungbuk Ku, Seoul 136701, South Korea
[2] Univ Seoul, Inst Quantum Informat Proc & Syst, Dongdaemun Ku, Seoul 130743, South Korea
[3] Korea Inst Sci & Technol, Semicond Mat Lab, Seoul 130650, South Korea
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2000年 / 7卷 / 3-4期
关键词：
self-assembled quantum dot; quantum dot transistor; InAs; transport;
D O I：
10.1016/S1386-9477(99)00355-0
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report on the fabrication and the characterization of quantum dot transistors incorporating a single self-assembled quantum dot. The current-voltage characteristics exhibit clear staircase structures at room temperature. They are attributed to electron tunneling through the quantized energy levels of a single quantum dot. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：430 / 434
页数：5
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