Charge trapping and degradation in Ge+ ion implanted SiO2 layers during high-field electron injection

被引：5
|
作者：
Nazarov, ANH
Osiyuk, IN
Lysenko, VS
Gebel, T
Rebohle, L
Skorupa, W
机构：
[1] NASU, Inst Semicond Phys, UA-03028 Kiev, Ukraine
[2] Forschungszentrum Rossendorf EV, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
来源：
MICROELECTRONICS RELIABILITY | 2002年 / 42卷 / 9-11期
关键词：
D O I：
10.1016/S0026-2714(02)00170-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
uring the constant current operation regime of electroluminescent Ge+ implanted SiO2-Si structures trapping of negative and generation of positive charges in oxide, creation of surface and border traps located in and near the SiO2 - Si interface are studied. Parameters and location of deep electron and hole traps in the oxide have been determined. Effect of Ge atom location on the Ge+ implanted SiO2-Si structures degradation is discussed. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1461 / 1464
页数：4
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