Three-dimensional simulation of silicon melt flow in electromagnetic Czochralski crystal growth

被引：17

作者：

Wang, W

Watanabe, M

Hibiya, T

Tanahashi, T

机构：

[1] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan

[2] Keio Univ, Fac Sci & Technol, Kohoku Ku, Yokohama, Kanagawa 2238522, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 2A期

关键词：

Czochralski crystal growth; electromagnetic force; silicon melt flow; three-dimensional numerical simulation;

D O I：

10.1143/JJAP.39.372

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The three-dimensional silicon melt now in Electromagnetic Czochralski (EMCZ) growth without crucible relation was numerically investigated using the finite element method. Due to the interaction of an axial magnetic with a constant electric current passing through the melt from the growing crystal to an electrode attached to the melt surface, an electromagnetic force (EMF) was generated. The EMF significantly suppressed the buoyant convection, and created a large axially elongated vortex in the bulk melt and a small one near the electrode. In EMCZ growth, the heat and mass transfers are thus controlled mostly through the axially elongated vortex driven by the local electromagnetic force. The feature of the melt now is in qualitative agreement with experimental observation.

引用

页码：372 / 377

页数：6

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