λ=1.3 μm high density InGaAs/GaAs quantum dots grown by molecular beam epitaxy

被引：0
|
作者：
Feng, David J. [1 ]
Tzeng, T. E. [1 ]
Chen, C. Y. [1 ]
Lay, T. S. [1 ]
Chang, T. Y. [1 ]
机构：
[1] Natl Sun Yat Sen Univ, Inst Electroopt Engn, Kaohsiung 80424, Taiwan
来源：
2006 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS CONFERENCE PROCEEDINGS | 2006年
关键词：
D O I：
10.1109/ICIPRM.2006.1634151
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InxGa1-xAs (x=0.5 similar to 0.75) QD's of high density of 1.3 x 10(11) cm(-2) and uniform size (diameter similar to 23-nm and height similar to 4-nm) were obtained by MBE. lambda=1.3 mu m emission was observed for In0.65Ga0.35As QD's capped with In0.1Ga0.9As.
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页码：211 / +
页数：2
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