Space-charge-limited current with traps in trigonal selenium nanowires

被引:2
|
作者
Akiyama, Norio [1 ]
Dohi, Tsukasa [1 ]
机构
[1] Okayama Univ Sci, Dept Elect & Elect Engn, Okayama 7000005, Japan
基金
日本科学技术振兴机构;
关键词
Nanowires; Conductivity of elemental Semiconductors; Impurity and defect levels in elemental Semiconductors; Optical properties of Nanowires;
D O I
10.35848/1347-4065/abe015
中图分类号
O59 [应用物理学];
学科分类号
摘要
The current-voltage (I-V) characteristics of trigonal selenium (t-Se) nanowire (NW) crystals made via immersion in ethanol have been studied. A steep increase in current at the trap-filled limit voltage is observed in the I-V curve of t-Se NWs with a space-charge-limited current. From an analysis of the I-V characteristics based on a three-dimensional model, the trap concentration and trap energy are estimated to be 6.8 x 10(12) cm(-3) and 0.60 eV, respectively. It is compared with trap levels of 0.59, 0.42, and 0.37 eV obtained from an analysis of the photocurrent spectrum of t-Se NWs, which can be attributed to the deformation, OH- stretching mode, and CH- stretching mode, respectively.
引用
收藏
页数:6
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