Reflectance and magneto-optical Kerr rotation of Graphene/SiC/InSb/SiC/Al structure at terahertz frequency region

In this paper, a numerical study on the reflectance and Kerr rotation spectra of a multilayer structure as Graphene/SiC/InSb/SiC/Al was performed at 2-15 THz frequency region. The whole structure was under an external static magnetic field, which was normal to the surface of the layers. The magnetic field was applied to induce the magneto-optical characteristics of the graphene and InSb layers. The Al layer at the end of the structure was utilized to improve the reflectance coefficient of the structure. The reflectance and Kerr rotation spectra of the structure were calculated using 4 by 4 transfer matrix method, and the effects of the strength of external magnetic field (B), environment temperature (T), and chemical potential of graphene (mu(c)) were investigated on the mentioned spectra. The results showed that resonance behaviors were created in both of the spectra at the few particular frequencies. The most strong resonance was seen near the frequency upsilon = 3.1 THz, and the reflectance coefficient and Kerr rotation angle at this frequency were affected by changing the B, T, and mu(c). It was revealed that one can obtain a particular reflectance coefficient and Kerr rotation angle at this resonance frequency by simultaneous adjustment of B, T, and mu(c).