Low-energy ion beams in semiconductor processing

Ion beams in a high vacuum environment have a wide variety of applications in semiconductor processing, Ion beam techniques are superior to plasma processes because of independent control of ion energy and flux, and the absence of impurities in the high vacuum environment. This paper presents a review of research work carried out in the authors' laboratory on single and dual ion beam techniques for deposition of various silicon related films and for etching by conventional and chemically assisted processes. Deposited films, such as polySi, polySiGe, SiO2, SiN and SiON, have been characterised by various techniques. Some important results have been presented.