Theory of oblique-field magnetoresistance from spin centers in three-terminal spintronic devices

被引:0
|
作者
Harmon, N. J. [1 ,2 ]
Flatte, M. E. [1 ,3 ]
机构
[1] Univ Iowa, Dept Phys & Astron, Iowa City, IA 52242 USA
[2] Univ Evansville, Dept Phys, Evansville, IN 47722 USA
[3] Eindhoven Univ Technol, Dept Appl Phys, NL-5612 AZ Eindhoven, Netherlands
关键词
INJECTION;
D O I
10.1103/PhysRevB.103.035310
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a general stochastic Liouville theory of electrical transport across a barrier between two conductors that occurs via sequential hopping through a single defect's spin-0 to spin-1/2 transition. We find magnetoconductances similar to Hanle features (pseudo Hanle features) that originate from Pauli blocking without spin accumulation, and also predict that evolution of the defect's spin modifies the conventional Hanle response, producing an inverted Hanle signal from spin center evolution. We propose studies in oblique magnetic fields that would unambiguously determine if a magnetoconductance results from spin-center assisted transport.
引用
收藏
页数:6
相关论文
共 15 条
  • [1] Spin injection and local magnetoresistance effects in three-terminal devices
    Txoperena, Oihana
    Casanova, Felix
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 49 (13)
  • [2] Ballistic transport and electrical spin signal enhancement in a nanoscale three-terminal spintronic device
    Zhu, Lei
    Yu, Edward T.
    [J]. APPLIED PHYSICS LETTERS, 2011, 98 (14)
  • [3] Spin-polarization induced by Rashba spin-orbit coupling in three-terminal devices
    Yamamoto, M.
    Dittmer, K.
    Kramer, B.
    Ohtsuki, T.
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 32 (1-2): : 462 - 465
  • [4] Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer
    Ruzmetov, Dmitry
    Gopalakrishnan, Gokul
    Ko, Changhyun
    Narayanamurti, Venkatesh
    Ramanathan, Shriram
    [J]. JOURNAL OF APPLIED PHYSICS, 2010, 107 (11)
  • [5] Effects of Zeeman splitting on spin transportation in a three-terminal Rashba ring under a weak magnetic field
    Zhai, Li-Xue
    Wang, Yan
    An, Zhong
    [J]. AIP ADVANCES, 2018, 8 (05)
  • [6] Two- and three-terminal far-from-equilibrium thermoelectric nano-devices in the Kondo regime
    Eckern, Ulrich
    Wysokinski, Karol, I
    [J]. NEW JOURNAL OF PHYSICS, 2020, 22 (01):
  • [7] Field emission energy distribution and three-terminal current-voltage characteristics from planar graphene edges
    Shaw, Jonathan L.
    Boos, John B.
    Kong, Byoung Don
    Robinson, Jeremy T.
    Jernigan, Glenn G.
    [J]. JOURNAL OF APPLIED PHYSICS, 2019, 125 (05)
  • [8] Experimental demonstration of electrical spin injection into semiconductor employing conventional three-terminal and non-local Hanle devices using spin gapless semiconductor as ferromagnetic injector
    Maji, Nilay
    Chakraborty, Bishnu
    Nath, Tapan Kumar
    [J]. APPLIED PHYSICS LETTERS, 2023, 122 (09)
  • [9] Spin injection into silicon in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer
    Sato, Shoichi
    Nakane, Ryosho
    Hada, Takato
    Tanaka, Masaaki
    [J]. PHYSICAL REVIEW B, 2017, 96 (23)
  • [10] Studies on room-temperature electric-field effect in ionic-liquid gated VO2 three-terminal devices
    Yang, Zheng
    Zhou, You
    Ramanathan, Shriram
    [J]. JOURNAL OF APPLIED PHYSICS, 2012, 111 (01)