Dislocation in heteroepitaxial diamond visualized by hydrogen plasma etching

被引：36
|
作者：
Ichikawa, K. [1 ]
Kodama, H. [1 ]
Suzuki, K. [2 ]
Sawabe, A. [1 ]
机构：
[1] Aoyama Gakuin Univ, Dept Elect Engn & Elect, Sagamihara, Kanagawa 2290206, Japan
[2] TOPLAS ENGN Co Ltd, Chofu, Tokyo 1820006, Japan
来源：
THIN SOLID FILMS | 2016年 / 600卷
关键词：
Diamond; Heteroepitaxial growth; Chemical vapor deposition; Dislocation; Etch pit method; Transmission electron microscopy; CVD DIAMOND; FILMS; CRYSTALS; GROWTH;
D O I：
10.1016/j.tsf.2016.01.009
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The classification of etch pits formed by hydrogen plasma etching on heteroepitaxial diamond has been done by cross-sectional transmission electronmicroscope (TEM). We demonstrated that the origin of etch pit was mainly [001] threading dislocation. From invisibility criterion of dislocation contrast in TEM observation, this dislocation was identified as edge and 45 degrees mixed dislocation. The correlation between dislocation types and etch pit shape was discussed. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：142 / 145
页数：4
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