Numerical simulation and performance measure of highly efficient GaP/InP/Si multi-junction solar cell

被引:8
|
作者
Sathya, P. [1 ]
Natarajan, R. [2 ]
机构
[1] VIT Univ, Dept Elect Engn, Vellore 632014, Tamil Nadu, India
[2] VIT Univ, Dept Mech Engn, Vellore 632014, Tamil Nadu, India
关键词
absorption; current matching; GaP; InP; multi-junction; photocurrent density; quantum efficiency; tunnel junction;
D O I
10.1002/er.3708
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
A novel multi-junction GaP/InP/Si solar cells with improved p++AlGaAs/n++ AlGaAs tunnel junction model is designed using the Synopsys/RSoft/Solar cell utility software. The optical and electrical simulations of this cell are performed using the 2D full-wave and solar cell utility, resulting in an open circuit voltage of 3.02V, short circuit current density of 15.942mA/cm(2), fill factor of 82.7%, and power conversion efficiency of 44.23%. Then, an optimization study of a function of variation in thickness of different layers is performed. Simulation results of the optimized structure under AM 1.5G condition showed a small improvement in the short circuit current density by 0.38%, efficiency by 0.375%, whereas the fill factor and open circuit voltage are maintained the same. The proposed multi-junction solar cell has reported the highest power conversion efficiency of 44.397% among the III-V triple junction solar cells designed already. Copyright (c) 2017 John Wiley & Sons, Ltd.
引用
收藏
页码:1211 / 1222
页数:12
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