Circuit Elements With Memory: Memristors, Memcapacitors, and Meminductors

被引:814
|
作者
Di Ventra, Massimiliano [1 ]
Pershin, Yuriy V. [2 ,3 ]
Chua, Leon O. [4 ]
机构
[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
[2] Univ S Carolina, Dept Phys & Astron, Columbia, SC 29208 USA
[3] Univ S Carolina, USC Nanoctr, Columbia, SC 29208 USA
[4] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
基金
美国国家科学基金会;
关键词
Capacitance; dynamic response; hysteresis; inductance; memory; resistance; NANODEVICES; SWITCH;
D O I
10.1109/JPROC.2009.2021077
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We extend the notion of memristive systems to capacitive and inductive elements, namely, capacitors and inductors whose properties depend on the state and history of the system. All these elements typically show pinched hysteretic loops in the two constitutive variables that define them: current-voltage for the memristor, charge-voltage for the memcapacitor, and current-flux for the meminductor. We argue that these devices are common at the nanoscale, where the dynamical properties of electrons and ions are likely to depend on the history of the system, at least within certain time scales. These elements and their combination in circuits open up new functionalities in electronics and are likely to find applications in neuromorphic devices to simulate learning, adaptive, and spontaneous behavior.
引用
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页码:1717 / 1724
页数:8
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