Single Chip RF Variable Gain Low Noise Amplifier

被引：0

作者：

Hou, Bin ^{[1
]}

Zhao, Yibing ^{[1
]}

Newman, Eric ^{[1
]}

Zhang, Shuyun ^{[1
]}

机构：

[1] Analog Devices Inc, Wilmington, MA 01887 USA

来源：

2014 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS): INTEGRATED CIRCUITS IN GAAS, INP, SIGE, GAN AND OTHER COMPOUND SEMICONDUCTORS | 2014年

关键词：

GaAs; BiFET; variable gain low noise amplifier;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

A monolithic integrated single chip RF variable gain low noise amplifier (VGLNA) based on GaAs BiFET technology is demonstrated in this work. The LNA could be operated from 700MHz to 3GHz. The measured NF is 1dB at both 975MHz and 1.75GHz. The gain of the VGLNA can be varied from a maximum of 36dB down to a minimum of -13dB at 1.75GHz. Measured Output IP3 is 38.4dBm and measured Output 1dB compression is greater than 27dBm at 1.75GHz at maximum gain. The measured input return loss is better than 14dB across the full gain range. The single die VGLNA is implemented in a 5x5mm LFCSP package. It draws 265mA on a 5V supply.

引用

页数：4

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