Electro-optic modulation in bulk silicon using surface plasmon resonance

被引:4
|
作者
Debnath, Kapil [1 ,2 ]
Damas, Pedro [1 ,3 ]
O'Faolain, Liam [1 ]
机构
[1] Univ St Andrews, Sch Phys & Astron, SUPA, St Andrews KY16 9SS, Fife, Scotland
[2] Univ Southampton, Fac Phys Sci & Engn, Nano Res Grp, Southampton SO17 1BJ, Hants, England
[3] Univ Paris Sud, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France
基金
英国工程与自然科学研究理事会;
关键词
Surface plasmons; Integrated optoelectronic circuits; Modulators; Silicon photonics; INTERCONNECTS;
D O I
10.1016/j.photonics.2015.11.002
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We propose and present simulated results for a new design of an optical modulator based on Surface Plasmon Polariton (SPP) resonance. The modulator is realized on a bulk silicon substrate, thus offering an opportunity for front-end integration with electronic circuits. The device consists of a dielectric waveguide evanescently coupled to a SPP mode at the interface between bulk silicon and metal. By using SPP resonance we achieved an ultra-high spectral sensitivity (similar to 5000 nm/refractive index unit) with large modulation bandwidth (90 nm). For a refractive index change of 0.02, we achieved 100 nm shift in resonance wavelength and a modulation depth of similar to 10 dB. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:31 / 35
页数:5
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