Electronic structure of MCuSn compounds with M=Ti, Zr and Hf

被引：4

作者：

Shelyapina, MG

Koblyuk, N

Romaka, L

Stadnyk, Y

Bodak, O

Hlil, EK

Wolfers, P

Fruchart, D

Tobola, J

机构：

[1] CNRS, Cristallog Lab, F-38042 Grenoble 9, France

[2] St Petersburg State Univ, Inst Phys, St Petersburg 198904, Russia

[3] I Franco Univ, Dept Chem, UA-290005 Lvov, Ukraine

[4] AGH Univ Sci & Technol, Fac Phys & Nucl Tech, PL-30059 Krakow, Poland

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2002年 / 347卷 / 1-2期

关键词：

transition metal compounds; electronic band structure; electrical transport;

D O I：

10.1016/S0925-8388(02)00770-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The electronic properties of the newly synthesised intermetallic compounds MCuSn with M=Ti, Zr, Hf were theoretically investigated using the self-consistent Korringa-Kohn-Rostoker (KKR) method. The calculations confirm the metallic type conductivity as evidenced from electrical resistivity measurements. A pseudo-gap was found at the Fermi level from band structure calculations. It indicates an anisotropic character of the transport properties in all these compounds. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：43 / 51

页数：9

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