Laser-dressing and magnetic-field effects on shallow-donor impurity states in semiconductor GaAs-Ga1-xAlxAs cylindrical quantum-well wires

被引：5
|
作者：
Lopez, F. E. [1 ]
Reyes-Gomez, E. [2 ]
Porras-Montenegro, N. [3 ]
Brandi, H. S. [4 ,5 ]
Oliveira, L. E. [5 ,6 ]
机构：
[1] Inst Tecnol Metropolitano, Medellin, Colombia
[2] Univ Antioquia, Inst Fis, Medellin 5130, Colombia
[3] Univ Valle, Dept Fis, Cali 25360, Colombia
[4] Univ Fed Rio de Janeiro, Inst Fis, BR-21945970 Rio De Janeiro, Brazil
[5] Inmetro, BR-25250020 Duque De Caxias, RJ, Brazil
[6] Univ Estadual Campinas, Inst Fis, BR-13083970 Campinas, SP, Brazil
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2010年 / 22卷 / 04期
基金：
巴西圣保罗研究基金会;
关键词：
INFRARED TRANSITIONS; HYDROGENIC STATES; HETEROSTRUCTURES; ENERGIES;
D O I：
10.1088/0953-8984/22/4/045303
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The influence of an intense laser field on shallow-donor states in cylindrical GaAs-Ga1-xAlxAs quantum-well wires under an external magnetic field applied along the wire axis is theoretically studied. Numerical calculations are performed in the framework of the effective-mass approximation, and the impurity energies corresponding to the ground state and 2p(+/-) excited states are obtained via a variational procedure. The laser-field effects on the shallow-donor states are considered within the extended dressed-atom approach, which allows one to treat the problem 'impurity + heterostructure + laser field + magnetic field' as a renormalized 'impurity + heterostructure + magnetic field' problem, in which the laser effects are taken into account through a renormalization of both the conduction-band effective mass and fundamental semiconductor gap.
引用
收藏
页数：7
相关论文
共 50 条
  • [1] ELECTRONIC AND SHALLOW DONOR IMPURITY STATES IN GAAS-GA1-XALXAS QUANTUM-WELL WIRES - EFFECTS OF DIELECTRIC MISMATCH
    DENG, ZY
    LAI, TR
    GUO, JK
    GU, SW
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 75 (11) : 7389 - 7393
  • [2] BOUND IMPURITY IN GAAS-GA1-XALXAS QUANTUM-WELL WIRES
    OSORIO, FAP
    DEGANI, MH
    HIPOLITO, O
    [J]. PHYSICAL REVIEW B, 1988, 37 (03): : 1402 - 1405
  • [3] PHOTOLUMINESCENCE STUDY OF SHALLOW ACCEPTORS IN GAAS-GA1-XALXAS CYLINDRICAL QUANTUM-WELL WIRES
    LATGE, A
    PORRASMONTENEGRO, N
    OLIVEIRA, LE
    [J]. PHYSICAL REVIEW B, 1992, 45 (12): : 6742 - 6746
  • [4] IMPURITY STATES IN A QUANTUM-WELL WIRE OF GAAS-GA1-XALXAS
    DASILVA, AF
    [J]. PHYSICAL REVIEW B, 1990, 41 (03): : 1684 - 1686
  • [5] Shallow-donor impurity in coupled GaAs/Ga1-xAlxAs quantum well wires: hydrostatic pressure and applied electric field effects
    Tangarife, E.
    Duque, C. A.
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2010, 247 (07): : 1778 - 1785
  • [6] The influence of compressive stress on shallow-donor impurity states in symmetric GaAs-Ga1-xAlxAs double quantum dots
    Liu, Jian-Jun
    Shen, Man
    Wang, Shao-Wei
    [J]. JOURNAL OF APPLIED PHYSICS, 2007, 101 (07)
  • [7] IMPURITY-RELATED OPTICAL-ABSORPTION SPECTRA OF GAAS-GA1-XALXAS CYLINDRICAL QUANTUM-WELL WIRES
    PORRASMONTENEGRO, N
    LATGE, A
    OLIVEIRA, LE
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (10) : 5555 - 5560
  • [8] Hydrostatic pressure, electric and magnetic field effects on shallow donor impurity states and photoionization cross section in cylindrical GaAs-Ga1-xAlxAs quantum dots
    Barseghyan, M. G.
    Kirakosyan, A. A.
    Duque, C. A.
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2009, 246 (03): : 626 - 629
  • [9] Shallow acceptor impurity states in V-shaped GaAs-Ga1-xAlxAs quantum wires
    Deng, ZY
    Ohji, T
    Chen, XS
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2000, 12 (13) : 3019 - 3027
  • [10] Effects of the magnetic fields on the impurity states in a cylindrical GaAs quantum-well wires
    Niculescu, E.
    Cristea, M.
    [J]. UPB Scientific Bulletin, Series A: Applied Mathematics and Physics, 2000, 62 (04): : 59 - 66
12345