Surface and volume decay times of photoconductivity in n-type silicon wafers

被引：1

作者：

Munakata, Chusuke ^{[1
]}

Suzuki, Takumi ^{[1
]}

机构：

[1] Tohoku Inst Technol, Dept Elect, Taihaku Ku, Sendai, Miyagi 9828588, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 01期

关键词：

n-type silicon wafer; hydrofluoric acid; surface potential; microwave-detected photoconductive decay method; surface decay time; volume decay time; PHOTOVOLTAGES; GENERATION;

D O I：

10.1143/JJAP.46.243

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two photoconductive decay times in the surface and volume regions of silicon wafers can be separately derived from the microwave-detected photoconductive decay signals assuming two independent exponential functions for the annihilation of excess carriers. The surface decay times vary from 60 to 30 mu s when an n-type silicon wafer rinsed with a hydrofluoric acid solution is kept exposed to the air, while the volume decay times of around 2.5 mu s thus obtained are constant, as theoretically expected.

引用

页码：243 / 244

页数：2

共 50 条

[1] Surface and volume decay times of photoconductivity in n-type silicon wafers
Munakata, Chusuke
Suzuki, Takumi
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2007, 46 (01): : 243 - 244
[2] Separation between surface and volume decay times of photoconductivity in p-type silicon wafers
Munakata, Chusuke
Suzuki, Takumi
Japanese Journal of Applied Physics, Part 2: Letters, 2006, 45 (33-36):
[3] Separation between surface and volume decay times of photoconductivity in p-type silicon wafers
Munakata, Chusuke
Suzuki, Takumi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (33-36): : L941 - L943
[4] DECAY IN PHOTOCONDUCTIVITY ASSOCIATED WITH HOLE TRAPS IN N-TYPE SILICON
HAYNES, JR
HORNBECK, JA
PHYSICAL REVIEW, 1954, 94 (05): : 1438 - 1438
[5] Decay times of impulse surface photovoltages in p-type silicon wafers
Munakata, Chusuke
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (10A): : 6592 - 6594
[6] EFFECT OF THERMAL OXIDATION ON SHORT-WAVELENGTH PHOTOCONDUCTIVITY OF N-TYPE SILICON WAFERS OF VARYING THICKNESS
ZAKHAROV, VP
KABALOV, VK
RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1971, 16 (04): : 705 - &
[7] PHOTOCONDUCTIVITY OF GOLD-DOPED N-TYPE SILICON
BADALOV, AZ
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (11): : 1435 - &
[8] Gettering Mechanism of Copper in n-Type Silicon Wafers
Ozaki, Rie
Torigoe, Kazuhisa
Mizuno, Taisuke
Yamamoto, Kazuhiro
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2019, 216 (17):
[9] N-type multicrystalline silicon wafers for solar cells
Martinuzzi, S
Palais, O
Pasquinelli, M
Barakel, D
Ferrazza, F
CONFERENCE RECORD OF THE THIRTY-FIRST IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2005, 2005, : 919 - 922
[10] Photoconductivity studies of n-type hydrogenated amorphous silicon and microcrystalline silicon
R. Brüggemann
Journal of Materials Science: Materials in Electronics, 2003, 14 : 629 - 633

← 1 2 3 4 5 →