Molecular dynamics study of phase change materials

被引:0
|
作者
Hegedus, J. [1 ]
Elliott, S. R. [1 ]
机构
[1] Univ Cambridge, Dept Chem, Cambridge CB2 1EW, England
来源
关键词
Phase-change memory materials; Ge-Sb-Te; ab initio molecular dynamics;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have simulated, by ab initio molecular dynamics (MD), the entire phase-change (PC) cycle in Ge-Sb-Te (GST) materials Rapid quenching from the melt results in the formation of the amorphous state but, on slower cooling, the models crystallize into the metastable rocksalt crystalline phase. Thermal annealing of the quenched amorphous models also results in crystallization to the same polymorph Significant numbers of connected, near-planar 4-membered (square) rings exist in the liquid state, and are quenched into the amorphous solid The presence of these crystal seeds is responsible for the rapid, homogeneously-nucleated crystallization behaviour characteristic of GST PC memory materials
引用
收藏
页码:1060 / 1063
页数:4
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