Investigation of tin atomic migration of tin-based solders with cluster model and DV-Xα method in electromigration

被引:0
|
作者
An, Rong [1 ]
Wang, Chunqing [1 ]
Tian, Yanhong [1 ]
机构
[1] Harbin Inst Technol, Sch Mat Sci & Engn, Microjoining Lab, Harbin 150001, Peoples R China
关键词
molecular orbital calculation; DV-X alpha; electromigration; tin-based solders; vacancy;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The continual accumulations of Sri atom near anode and of vacancy near cathode in electromigration of tin-based solder related to the detail of Sri atomic migration. In this research, ab initio molecular orbital calculations for variation of electronic state with movement of tin atom in tin-based solder alloys were conducted by using the discrete-variational (DV)-X alpha cluster method. In the results, we confirmed anisotropism of vacancy diffusion from the viewpoint of the covalent interaction. Furthermore, it is found that the net charge of the moving Sri atom changed from negative to positive with the movement. These results would be helpful to further the fundamental knowledge on diffusion process with vacancies in the case of electromigration.
引用
收藏
页码:829 / 832
页数:4
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