Reentrance of conductance in mesoscopic normal-metal/superconductor junctions

被引：1
|
作者：
Kim, N
Lee, H [1 ]
Chang, HS
Kim, JJ
Lee, JO
Park, JW
Yoo, KH
机构：
[1] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea
[2] Chonbuk Natl Univ, Dept Phys, Chonju 561756, South Korea
[3] Korea Res Inst Stand & Sci, Elect Grp, Taejon 305600, South Korea
来源：
PHYSICA B | 2000年 / 284卷 / 284期
关键词：
Andreev reflection; proximity effect; reentrance of conductance;
D O I：
10.1016/S0921-4526(99)02900-2
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Two different kinds of mesoscopic N-S-N junctions were fabricated by sandwiching Al or Pb film between two closely separated Au wires. dV/dI versus V curves for an Au-Pb-Au junction show a sharp zero-bias dip, while those for an Au-Al-Au show a reentrant zero-bias maximum. Interference between conjugate electrons and holes at an interface with different degree of transparency is responsible for the contrasting behavior. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1866 / 1867
页数：2
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