Electrodeposition of wide band gap InGaxSyOz thin films for solar cell applications

被引：1

作者：

Haleem, A. M. Abdel ^{[1
,2
]}

Ichimura, M. ^{[2
]}

机构：

[1] Fayoum Univ, Fac Engn, Al Fayyum, Egypt

[2] Nagoya Inst Technol, Dept Engn Phys Elect & Mech, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2009年 / 164卷 / 03期

关键词：

Indium Gallium sulfide oxide; Thin films; Electrochemical deposition; Cd-free buffer layer; Solar cells; INXSY BUFFER LAYERS; INDIUM SULFIDE; CHEMICAL BATH; DEPOSITION;

D O I：

10.1016/j.mseb.2009.09.013

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium-Gallium-sulfide-oxide thin films were deposited onto F-doped SnO2-coated glass by electrochemical deposition from an aqueous bath. The films were deposited at three different ratios of gallium to indium in the precursor bath; namely [Ga/In] = 2/8, 5/5 and 8/2. The impact of the gallium content on the composition, optical transmission, structure. photosensitivity, electrical resistivity and morphology of the deposited films was investigated. The films deposited at [Ga/In] = 5/5 and 8/2 had an energy gap as high as 3.5 eV. The X-ray diffraction spectrum of the film deposited at [Ga/In] = 2/8 contained weak peaks of indium metal, but the In peaks were absent in the spectra of the films deposited at [Ga/In] = 5/5 and 8/2. The photosensitivity of he film was observed by means of photoelectrochemical measurements, which confirmed that all the films showed n-type conduction. Finally. the film has been used as a buffer layer to fabricate a SnS-based thin film solar cell. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.

引用

页码：180 / 185

页数：6

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