Design considerations for a silicon-based p-i-n phase modulator in a double ridge waveguide with side isolating grooves

被引：0
|
作者：
Chen, Shaowu [1 ]
Xu, Dan-Xia
Xu, Xuejun [1 ]
Tu, Xiaoguang [1 ]
McKinnon, Ross [2 ]
Barrios, Pedro [2 ]
Cheben, Pavel [2 ]
Janz, Siegfried [2 ]
Yu, Jinzhong [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON, Canada
来源：
2007 4TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS | 2007年
基金：
美国国家科学基金会;
关键词：
silicon photonics; optoelectronics; SOI; waveguides; modulators; switching speed; absorption loss;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present detail design considerations and simulation results of a forward biased carrier injection p-i-n modulator integrated on SOI rib waveguides. To minimize the free carrier absorption loss while keeping the comparatively small lateral dimensions of the modulator as required for high speed operation, we proposed two structural improvements, namely the double ridge (terrace ridge) structure and the isolating grooves at both sides of the double ridge. With improved carrier injection and optical confinement structure, the simulated modulator response time is in sub-ns range and absorption loss is minimized.
引用
收藏
页码：123 / +
页数：2
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