The IGBT - An optimized device for system integration

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作者
Lorenz, L
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
摘要
Recent innovations have clearly shown that the IGBT concept has considerable scope for further development in terms of improving saturation voltage in the on-state as well as dynamic losses whilst maintaining ruggedness and the excellent limit load tolerances. Both the horizontal optimization of the cell structure and the vertical optimization of the Si material have led a to dramatic improvement in V-CE sat values. This new NPT concept is now applied in the voltage range between 600V and 3.5kV. By means of additional charge carrier lifetime adjustment, the turn-off behavior has been improved in terms of lower tail losses. This means the IGBT can now be used in applications which to date have been the preserve of power MOSFETs. This Econopack has extended package families to allow the implementation of new, more economical, flexible and reliable construction techniques far DC/AC converters for drive systems. The Econopack is a solderable package with exceptionally low parasitic inductance and simple parallel connection.
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页码:431 / 438
页数:8
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