Thermal stability of nickel silicides in different silicon substrates

被引：4
|
作者：
Ho, SCH [1 ]
Poon, MC [1 ]
Chan, M [1 ]
Wong, H [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Clearwater Bay, Hong Kong
来源：
1998 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS | 1998年
关键词：
D O I：
10.1109/HKEDM.1998.740198
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thermal stability of nickel monosilicide (NiSi) on single crystalline silicon (c-Si), poly-crystalline silicon (poly-Si) and amorphous silicon (a-Si) has been investigated. NiSi is stable and can show low resistivity on c-Si and poly-Si up to around 700 degrees C forming gas anneal (FGA), but is quite unstable on a-Si substrate even after corresponding annealing at only 400 degrees C. However, NiSi pure gate formed on poly-Si and a-Si films are both found to be quite stable with temperature up to 1000 degrees C FGA and on 1000 Angstrom gate oxide.
引用
收藏
页码：105 / 108
页数：4
相关论文
共 50 条
  • [1] Thermal stability of cobalt and nickel silicides in amorphous and crystalline silicon
    Poon, MC
    Deng, F
    Wong, H
    Wong, M
    Sin, JKO
    Lau, SS
    Ho, CH
    Han, PG
    [J]. 1997 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, 1997, : 65 - 68
  • [2] Thermal stability of cobalt and nickel silicides
    Poon, MC
    Ho, CH
    Deng, F
    Lau, SS
    Wong, H
    [J]. MICROELECTRONICS AND RELIABILITY, 1998, 38 (09): : 1495 - 1498
  • [3] Role of a Mo interlayer on the thermal stability of nickel silicides
    Ok, YW
    Choi, CJ
    Seong, TY
    Thanachayanont, C
    [J]. MICROSCOPY OF SEMICONDUCTING MATERIALS 2003, 2003, (180): : 475 - 478
  • [4] Properties of iridium-inserted nickel silicides by thermal annealing of the Ni/Ir bilayer on silicon and polysilicon substrates
    Song, Ohsung
    Yoon, Kijeong
    [J]. METALS AND MATERIALS INTERNATIONAL, 2007, 13 (03) : 229 - 234
  • [5] Properties of iridium-inserted nickel silicides by thermal annealing of the Ni/Ir bilayer on silicon and polysilicon substrates
    Ohsung Song
    Kijeong Yoon
    [J]. Metals and Materials International, 2007, 13 : 229 - 234
  • [6] Role of interfacial nickel silicides in shaping magnetic anisotropy in nickel films grown on Silicon substrates
    Hussain, Zainab
    Reddy, V. Raghavendra
    Dhar, Subhabrata
    [J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2023, 566
  • [7] Enhancement of the Thermal Stability of TiNx Capping Layer on the Nickel Silicides
    Wu, Chi-Ting
    Lee, Wen-Hsi
    Chang, Shih-Chieh
    Cheng, Yi-Lung
    Wang, Ying-Lang
    [J]. NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2011, 3 (02) : 272 - 275
  • [8] Improvement in Thermal Stability of Nickel Silicides Using NiNx Films
    Kim, Sun Il
    Lee, Seung Ryul
    Ahn, Kyung Min
    Ahn, Byung Tae
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (03) : H231 - H234
  • [9] Phase formation and thermal stability of ultrathin nickel-silicides on Si(100)
    De Keyser, K.
    Van Bockstael, C.
    Van Meirhaeghe, R. L.
    Detavernier, C.
    Verleysen, E.
    Bender, H.
    Vandervorst, W.
    Jordan-Sweet, J.
    Lavoie, C.
    [J]. APPLIED PHYSICS LETTERS, 2010, 96 (17)
  • [10] Formation and stability of silicides on polycrystalline silicon
    Colgan, EG
    Gambino, JP
    Hong, QZ
    [J]. MATERIALS SCIENCE & ENGINEERING R-REPORTS, 1996, 16 (02): : 43 - 96
12345