Modeling of dark current in mid-infrared quantum-well infrared photodetectors

被引:1
|
作者
Castellano, Fabrizio [1 ]
Iotti, Rita C. [1 ]
Rossi, Fausto [1 ]
Faist, Jerome [2 ]
Lhuillier, Emmanuel [3 ,4 ]
Berger, Vincent [3 ]
机构
[1] Politecn Torino, Dipartimento Fis, I-10129 Turin, Italy
[2] ETH, Quantum Optoelect Grp, Zurich, Switzerland
[3] Univ Paris Diderot, Lab MPQ, F-75205 Paris 13, France
[4] ONERA DOTA, F-91761 Palaiseau, France
关键词
QWIP; Photodetector; Mid-infrared; Superlattice; Dark current; SUPERLATTICE;
D O I
10.1016/j.infrared.2009.05.031
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
optimization of dark current is a key technological issue to be addressed in order to improve quantum-well infrared photodetector (QWIP) performance. We develop a model for the description of current-voltage curves in mid-infrared QWIPs, which usually span a range of electric fields in which both low-field as well as high-field carrier transport effects are visible, especially at low temperatures. The model separates the I-V curve into a low-field and a high-field region allowing us to identify and separate the effects ascribed to miniband transport and carrier localization, respectively. We then compare simulations with our measurements of the I-V curves of mid-ir QWIPs finding a good quantitative agreement between theory and experiment. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:220 / 223
页数:4
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