Air-Spacer MOSFET With Self-Aligned Contact for Future Dense Memories

被引：16

作者：

Park, Jemin ^{[1
]}

Hu, Chenming ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 12期

关键词：

Air gap technology; air-spacer technology; high speed; low-k process; RC delay;

D O I：

10.1109/LED.2009.2034032

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An air-spacer transistor with self-aligned contact (SAC) is proposed. Air-spacer is created by removing the nitride spacer after the SAC plug has been formed. A three-dimensional mixed-mode simulation shows that this transistor structure has 35% smaller area, 10% faster speed, and 18% lower switching energy than a non-SAC MOSFET.

引用

页码：1368 / 1370

页数：3

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