UV-activated room-temperature gas sensing mechanism of polycrystalline ZnO

被引：311
|
作者：
Fan, Shan-Wei [1 ]
Srivastava, Arvind K. [1 ]
Dravid, Vinayak P. [1 ]
机构：
[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
来源：
APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 14期
关键词：
ELECTRON-BEAM LITHOGRAPHY; ZINC-OXIDE; LIGHT; SENSORS; FILMS; NANOPARTICLES; FABRICATION; OXYGEN;
D O I：
10.1063/1.3243458
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effects of UV illumination on the electronic properties and gas sensing performance of ZnO are reported. It is found that UV light improves the sensitivity and the sensor response and recovery rate. By investigating the photoresponse behavior of ZnO, we observe that the electrons generated by UV light promote the adsorption of oxygen and form the photoinduced oxygen ions [O(2)(-)(hv)]. These ions [O(2)(-)(hv)] are responsible for the room-temperature gas sensing phenomena and promise enhanced sensor performance through further optimization. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3243458]
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页数：3
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