Dynamic scaling of island size distribution in submonolayer one-dimensional growth

The dynamic scaling of the island size distribution (ISD) in the submonolayer growth regime of low-dimensional nanostructured systems is a long standing problem in epitaxial growth. In this study, kinetic Monte Carlo simulations of a realistic atomistic lattice-gas model describing the one-dimensional nucleation and growth of Al on Si(100): 2 x 1 were performed to investigate the scaling behavior under varied growth conditions. Consistent with previous predictions, our results show that the shape of the scaled island size distribution can be altered by controlling the temperature and the C-defect density. The shifts in the scaled ISD are opposite to each other with temperature depending on the density of C-defects. For lowC-defect density, a shift from a monomodal to a monotonically decreasing distribution as temperature increases is observed. We attribute the monomodal distribution to enhanced nucleation and aggregation whereas a monotonically decreasing distribution is attributed to restricted aggregation with defects playing only a minor role. At higher C-defect density, we show that the scaled ISD shift is from a monotonically decreasing to a monomodal distribution with increasing temperature. We argue that the reversal of the shift is due to competing effects introduced by high C-defect concentration. In addition, results show that the ISD is generally insensitive to flux variations and that at a high coverage regime the shift in the scaling behavior vanishes. Lastly, we posit that the shift in the scaled ISD indicates the departure of the island density's temperature dependence from predictions of classical nucleation theory.