Simulating single-junction GaAs solar cells including photon recycling

被引:55
|
作者
Letay, G. [1 ]
Hermle, M. [1 ]
Bett, A. W. [1 ]
机构
[1] Fraunhofer Inst Solar Energy Syst, D-79110 Freiburg, Germany
来源
PROGRESS IN PHOTOVOLTAICS | 2006年 / 14卷 / 08期
关键词
simulation; III-V solar cells; photon recycling;
D O I
10.1002/pip.699
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
To improve and accelerate further developments of III-V solar cells an accurate and reliable modelling is necessary. In this work we present a comprehensive two-dimensional numerical model of single junction GaAs solar cells. Using this numerical model we achieved good correlation between measurements and simulations of single junction GaAs solar cells with different internal structures. We introduced the concept of optical coupling matrix in the numerical model to account for photon recycling effects. In addition, it is shown that thermionic currents have to be considered at the III-V hetero-interfaces. With this numerical model a powerful and flexible tool for solar cell simulation of III-V compound semiconductor materials is now available. Copyright (c) 2006 John Wiley & Sons, Ltd.
引用
收藏
页码:683 / 696
页数:14
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