Investigation of step structure in CMP retainer ring to improve within-wafer non-uniformity

被引:4
|
作者
Park, Jinwoo [1 ]
Hong, Seokjun [2 ]
Lee, Seungjae [2 ]
Jin, Yinhua [3 ]
Kim, Taesung [2 ,3 ]
机构
[1] SK Hynix, Icheon, South Korea
[2] Sungkyunkwan Univ, Sch Mech Engn, Suwon, South Korea
[3] Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon, South Korea
关键词
CMP; Edge exclusion; Pad rebound effect; Retainer ring; Step structure; Stress distribution; STRESS;
D O I
10.1007/s12206-019-0634-1
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
A retainer ring structure was investigated to improve non-uniformity in a chemical mechanical planarization (CMP) process. During the CMP process, the stress distribution on the wafer affects the CMP performance in terms of material removal rate (MRR) and within-wafer non-uniformity (WIWNU). The non-uniformity is related to edge exclusion and affects the process yield. For this purpose, the stress distribution between pad and wafer was calculated via the finite-element method (FEM) and compared with the experimental results of a 300 mm wafer polishing test. The retainer ring with a step structure exhibited an improved stress distribution along the wafer surface. Consequently, the non-uniformity was improved by 16.6 %. These results can be used to optimize CMP processes (in particular, CMP retainer ring structures) and determine adequate process conditions.
引用
收藏
页码:3391 / 3395
页数:5
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