Design and Performance Analysis of High-Speed Induction Motor Drives Based on SiC Device

被引：0
|
作者：
He, Zeyu [1 ]
Liu, Yang [1 ]
Wang, Weikang [1 ]
Zhao, Jin [1 ]
机构：
[1] Huazhong Univ Sci & Technol, Sch Artificial Intelligence & Automat, Wuhan, Peoples R China
来源：
2019 22ND INTERNATIONAL CONFERENCE ON ELECTRICAL MACHINES AND SYSTEMS (ICEMS 2019) | 2019年
基金：
中国国家自然科学基金;
关键词：
SiC; induction motor; switching frequency; high-speed; current loop; MOSFET;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Silicon carbide (SiC) MOSFETs are perceived as future replacements for Si IGBTs in medium- and low-voltage drives due to their low conduction and switching losses. The application of SiC devices can greatly increase the switching frequency of the motor drives, thus providing the possibility of improving control performance. A high-speed induction motor drive based on SiC power device is proposed in this paper. The control structure and drive circuit of SiC motor drive were designed and verified. And then the performance with different switching frequencies was compared and studied. In most cases, the increased switching frequency of the motor drive improves system control performance. Some problems and challenges were also discussed.
引用
收藏
页码：627 / 631
页数：5
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