Continuous-Wave Operation of GaAs-Based 1.5-μm GaInNAsSb VCSELs

被引：7
|
作者：
Sarmiento, Tomas [1 ]
Zhao, Li [1 ]
Moser, Philip [1 ]
Li, Tianlei [2 ]
Huo, Yijie [2 ]
Harris, James S. [1 ]
机构：
[1] Stanford Univ, Dept Elect & Comp Engn, Stanford, CA 94305 USA
[2] Vertilite Inc, Sunnyvale, CA 94089 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2019年 / 31卷 / 20期
关键词：
Semiconductor lasers; vertical-cavity surface-emitting laser (VCSEL); GaAs-based lasers; GaInNAsSb; tunnel junction;
D O I：
10.1109/LPT.2019.2938177
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate the first electrically-pumped, GaAs-based vertical-cavity surface-emitting lasers (VCSELs) emitting in the 1500 nm range that operate in continuous wave mode at and above room temperature. The VCSELs employ a dilute-nitride GaInNAsSb/GaNAs multiple quantum well active region, two n-doped AlGaAs/GaAs distributed Bragg reflectors and a GaAs tunnel junction. Continuous-wave single-mode lasing was observed up to 50 degrees C with room-temperature threshold current densities below 3 kA/cm(2). Small signal measurements indicate that dilute nitride GaInNAsSb/GaNAs active regions are capable of high speed modulation.
引用
收藏
页码：1607 / 1610
页数：4
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