X-ray spectrum microanalysis of semiconductor epitaxial heterostructures on the basis of a monte carlo simulation of electron transport

Specific features of the X-ray spectrum microanalysis of semiconductor heterostructures based on III-V and II-VI alloys with thin epitaxial layers are considered. Simulation of electron transport on the basis of the Monte Carlo method is used to analyze the effect of the layer and substrate on the depth distribution of X-ray generation. Good agreement between the calculated and experimental values of the ratio between the intensities of emission from the layer and bulk sample for simulated Al0.2Ga0.8As structures on the GaAs substrate (with different thicknesses of the layer) is obtained. Methods allowing the performance of a correct microanalysis of the layers with thicknesses in excess of 50 nm and to determine simultaneously the composition and thickness of epitaxial layers are suggested. The methods developed can be used in the analysis of thin layers and in other systems.