Development of P-doped SiO2 as proton exchange membrane for microfuel cells

被引：10
|
作者：
Bhusari, D [1 ]
Li, J [1 ]
Jayachandran, PJ [1 ]
Moore, C [1 ]
Kohl, PA [1 ]
机构：
[1] Georgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USA
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2005年 / 8卷 / 11期
关键词：
D O I：
10.1149/1.2050587
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Phosphorus-doped silicon dioxide (PSG) thin films with improved ionic conductivity were deposited via plasma-enhanced chemical vapor deposition for application as a thin-film proton exchange membrane (PEM) in microfabricated fuel cells. More than three orders of magnitude improvement in the ionic conductivity is obtained by P doping of low-temperature deposited SiO2. The area resistance of 3 mu m thick film of PSG is comparable to a 200 mu m thick film of Nafion. Application of these PSG films as PEM in microfuel cells yielded more than one order of magnitude improvement in power density compared to low-temperature, undoped SiO2 membranes. (c) 2005 The Electrochemical Society.
引用
收藏
页码：A588 / A591
页数：4
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