Thermomechanical finite element modeling of Cu-SiO2 direct hybrid bonding with a dishing effect on Cu surfaces

被引：31
|
作者：
Beilliard, Y. [1 ,2 ,3 ,4 ]
Estevez, R. [1 ,3 ]
Parry, G. [1 ,3 ]
McGarry, P. [5 ]
Di Cioccio, L. [1 ,2 ]
Coudrain, P. [4 ]
机构：
[1] Univ Grenoble Alpes, F-38000 Grenoble, France
[2] CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
[3] CNRS, Grenoble INP, UJF, SIMaP UMR 5266, 1130 Rue Piscine,BP 75, F-38402 St Martin Dheres, France
[4] STMicroelectronics, 850 Rue Jean Monnet, F-38920 Crolles, France
[5] Natl Univ Ireland, Galway, Ireland
来源：
INTERNATIONAL JOURNAL OF SOLIDS AND STRUCTURES | 2017年 / 117卷
关键词：
3D integration; Direct bonding; Finite element analysis; Cohesive model; Nonlinear contact mechanics; CRACK-GROWTH;
D O I：
10.1016/j.ijsolstr.2016.02.041
中图分类号：
O3 [力学];
学科分类号：
08 ; 0801 ;
摘要：
Copper direct bonding technology is considered to be one of the most promising approaches for matching the miniaturization needs in future tridimensional integrated high performance circuits (3D-IC). However, the bonding mechanism of copper surfaces with an initial dishing effect, induced by the polishing step, must be investigated in order to optimize the adhesion process and prevent further reliability issues. In this study, we present thermomechanical finite element simulations of Cu-SiO2 hybrid bonding with account for the annealing step and various amplitudes of the initial dishing. A cohesive model that mimics nonlinear interactions between Cu/Cu and SiO2/SiO2 interfaces and related bonding mechanism is implemented within a nonlinear contact mechanics strategy. The bonding process along with the influence of the annealing conditions and the copper plastic response on the closure of the Cu/Cu interface are investigated. (C) 2016 Published by Elsevier Ltd.
引用
收藏
页码：208 / 220
页数：13
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